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News Release

December 16, 1996

Hitachi Releases 64-Mbit Synchronous DRAMs Operating at 100 MHz and 128-Mbyte Synchronous DRAM Modules

- Large-capacity memories provide high speed, efficient data transfer -

Hitachi, Ltd. has developed these series of 64-Mbit synchronous DRAMs that operate at 100MHz operation and provide a high data transfer speed of 200 Mbytes per second in x 16-bit configuration, for main memory and high-speed image processing applications in workstations and personal computers. In Japan, sample shipments of the HM5264405 ( 16M x 4) will begin in January 1997, and will be followed by the HM5264805( 8M x 8) in April and the HM5264165 ( 4M x 16) in June.

Hitachi has also developed and is releasing the 7 series of 64-Mbit SDRAM modules. The HB526C1672EN, HB526C1664EN and HB526C864EN 168-pin unbuffered Dual Inline Memory Module (DIMM), and the HB526C1672E and HB526C872E 168-pin buffered DIMMs are for desktop PCs, and the 144-pin Small Outline (SO) HB526A864DB and HB526A464DB DIMMs are for notebook PCs. Sample shipments of these memory modules will begin from second quarter of 1997 in Japan.

The increasingly high performance of workstations and personal computers has been paralleled by an increase in system clock frequencies. And in the field of video memory, data transfer speeds have risen in line with higher display resolutions and advances in high-speed image processing technologies such as MPEG2*. At the same time, high-speed applications require a large main memory capacity.

Synchronous DRAM meets these needs by performing input/output operations in synchronization with a clock signal, and the ease with which high-speed operation can be achieved in synchronization with the system clock has led to a rapid increase in the use of this kind of memory. Hitachi already has 4- and 16-Mbit synchronous DRAMs in volume production, which are used as video memory in products such as game machines, personal computers and Hi-Vision TVs, and also as main memory in mainframe computers and workstations.

To meet the demand for faster and larger memories for PCs and for MPEG2 and other high-speed image processing applications, Hitachi developed the HM5264405/805/165 series of 64-Mbit synchronous DRAMs. Use of the latest 0.3-micron CMOS process technology and 3-stage pipelining enables the HM5264405/805/165 series to achieve the large capacity of 64 Mbits and high-speed operation synchronized with a 100 MHz clock. The new memories have a 4-bank configuration. Support for a 6-bit configuration has enabled the data transfer speed to be increased to a maximum of 200 Mbytes per second, making these synchronous DRAMs suitable for MPEG2 and similar image processing applications in which large volumes of data are processed at high speed. The new memories are mounted in 54-pin 400 mil TSOP-II packages and conform to JEDEC (Joint Electron Device Engineering Council) standard specifications.

Future plans to meet constantly evolving market needs include the development of SOJ and other package versions, and 125 MHz-plus ultra-high-speed versions featuring 4-stage pipelining and small-amplitude interface (SSTL 3) support, as well as research into the development of 256-Mbit capacity and use of a x 32 bit configuration and an 8-bank configuration.

[Note]

MPEG2 (Moving Picture Experts Group Phase 2): An international standard for moving picture compression and expansion technology.

[Applications]

1. 64-Mbit SDRAMs
Mainframe computers, workstations, personal computers

2. SDRAM Modules
168-pin DIMM : workstations, personal computers
144-pin SO DIMM: notebook PCs

[Sample Pricing in Japan]

- 64-Mbit SDRAMs
ProductBit configurationSample price
(yen)
HM5264405TT16Mx4x4Bank16,000
HM5264805TT8Mx8x4Bank16,000
HM5264165TT4Mx16x4Bank16,000

- SDRAM Modules
ProductBit configurationSample price
(yen)
168-pin
unbuffered
DIMM
HB526C1672EN16Mx72313,200
HB526C1664EN16Mx64278,400
HB526C864EN8Mx64139,200
168-pin
buffered
DIMM
HB526C1672E16Mx72316,800
HB526C872E8Mx72158,400
144-pin
SO DIMM
HB526A864DB8Mx64139,200
HB526A464DB4Mx6469,600

[Specifications]

- 64-Mbit SDRAMs
ItemHM5264405TTHM5264805TTHM5264165TT
Bit configuration16M word x 4 bit8M word x 8 bit4M word x 16bit
Voltage3.3V+/-0.3V
Interface LVTTL
Burst length1 / 2 / 4 / 8 FULL
Burst modesSequential/Interleaved
Clock frequency83/100 MHz
Access time
tAC
CL=3:8/10ns
CL=2:9/13ns
Set up/Hold2ns/1ns
FunctionsBurst stop
Burst read/write
Single read/write
Auto-precharge
Clock suspend
DQM control
Self-/Auto-refreshing
Process0.3 micron CMOS process
Package54-pin 400mil TSOP-II

- SDRAM Modules

(1) 168-pin 8-byte DIMM
ItemHB526C1672ENHB526C1664ENHB526C864ENHB526C1672EHB526C872E
Bit configuration16M word x 72 bit16M word x 64 bit8M word x 64bit16M word x 72 bit8M word x 72 bit
BufferUnbufferedBuffered
Power supply3.3V+/-0.3V
Burst length1 / 2 / 4 / 8 FULL
Burst modesSequential/Interleaved
Clock frequency83/100 MHz
Access time
tAC
CL=3:8/10nsCL=3:10/12ns
CL=2:9/13nsCL=2:11/15ns
Set up/Hold2ns/1ns
FunctionsBurst stop
Burst read/write
Single read/write
Auto-precharge
Clock suspend
DQM control
Self-/Auto-refreshing
Package size133.35mm x 31.75mm x 2.92mm133.35mm x 44.45mm x 2.92mm

(2) 144-pin SO DIMM
ItemHB526A864DBHB526A464DB
Bit configuration8M word x 64 bit4M word x 64 bit
Power supply voltage3.3V+/-0.3V
Burst length1 / 2 / 4 / 8 FULL
Burst modesSequential/Interleaved
Clock frequency83/100 MHz
Access time
tAC
CL=3:8/10ns
CL=2:9/13ns
Set up/Hold2ns/1ns
FunctionsBurst stop
Burst read/write
Single read/write
Auto-precharge
Clock suspend
DQM control
Self-/Auto-refreshing
Package size67.6mm x 31.75mm x 3.80mm


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