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February 4, 1997
Hitachi, Ltd. (Hitachi), Mitsubishi Electric Corporation (Mitsubishi) and Texas Instruments (TI) today signed an agreement to jointly develop 1-gigabit dynamic random-access memory (DRAM) chips. Joint activities include technology sharing, research and development of process and design capabilities continuing with prototyping 1-gigabit DRAM chips.To meet rapid industry growth and innovation in semiconductor memory chips, huge investments are required for complex and expensive technology development. This agreement allows the three companies to share the required resources and leading-edge technologies.
Dr. Tsugio Makimoto, Executive Managing Director of Hitachi said, "With this agreement signed today, we now have the world's strongest memory cooperation to develop world-class 1-gigabit memory technology. Hitachi has built strong relationships with both TI and Mitsubishi and we look forward to working together in this three-way development."
Dr. Shoji Hirabayashi, Senior Managing Director, General Manager, Semiconductor Group of Mitsubishi said, "By pooling the best technologies and strengths of each company, the agreement will realize benefits in terms of technology development efficiency that greatly exceeds what one company would've been able to achieve independently."
Dr. Yoshio Nishi, senior vice president, SC Group, TI, said, "We are pleased to be working with such highly respected companies such as Hitachi and Mitsubishi on these next-generation DRAM developments by which we establish world's pinnacle technologies. "
Since 1988, Hitachi and TI have been cooperating on the research and development of 16-, 64- and 256-megabit DRAM chips, while Hitachi and Mitsubishi have jointly developed 8-, 16- and 64-megabit flash memory chips.
In 1995, TI and Hitachi also formed a joint venture, TwinStar Semiconductor Incorporated, a half-billion-dollar wafer fabrication facility located in Richardson, Texas.
