| HITACHI HOME | UP | SEARCH |

June 15, 1998

Hitachi Releases Schottky Barrier Diode for High-Speed Switching

- Two low-loss diode elements in a small 2.1 mm x 2.0 mm package for improved mounting efficiency -

The constant increase in signal processing speeds in personal computers, measuring instruments, and similar equipment, has created a need for faster signal processing in the path lines that transmit these signals. Conventional junction diodes require a recovery time between the on and off states, limiting signal processing speeds. Based on the premise that a diode with a short recovery time is essential to achieving faster signal processing circuitry, Hitachi developed the HSB0104YP Schottky barrier diode for high-speed switching applications.

Making use of their short on-off recovery time, Schottky barrier diodes have been used in high-frequency detection and mixer applications, and in low-loss rectification applications that exploit their low-forward-voltage characteristic, but this new product is developed for switching use, in anticipation of the future proliferation of applications requiring high-speed signal processing. As conventional junction diodes employ switching characteristics derived from minority carriers, the switching time is limited by the lifetime of these carriers. However, the HSB0104YP, which works by majority carriers, is capable of high-speed switching with no lifetime limitations, making it ideal for use in high-speed logic circuits and data bus termination.

The HSB0104YP is available as a small 4-pin CMPAK-4 package (Hitachi package code, 2.1 mm x 2.0 mm mounting area), containing two independent diode elements, resulting in a 30% decrease in mounting area compared with the use of two of Hitachi's mainstream small 2-pin URP package (Hitachi package code, 2.5 mm x 1.25 mm mounting area). In addition, the use of independent pin arrangements provides for a wide variety of circuit configurations.

Features

1. 100 mA, 40 V high-speed switching Schottky barrier diode Schottky barrier diode suitable for high-speed switching, ideal for signal bus line protection. Low VF characteristic can be used to advantage in surge protection applications.
2. Small CMPAK-4 package (2.1 mm x 2.0 mm) Smaller end-product made possible by reducing mounting area by 30% compared with use of two of Hitachi's previous URP- package products.
3. Two independent diode elements in a single package Many circuit configurations possible, including anode- common, cathode-common, series connection, and parallel connection. High degree of flexibility in mounting board pattern for improved cost/performance.

Typical Applications

Bus lines in notebook PCs, PDAs (personal digital assistants), portable phones, etc.

Prices in Japan

Product Name	Sample Price (Yen)
HSB 0104YP	17

Specifications

1. Absolute Maximum Ratings (Ta = 25 degrees Celcius)

Item	Symbol	HSB0104YP	Unit
Reverse voltage	VR	40	V
Forward current	IF	100	mA
Surge forward current	IFSM	3	A
Maximum junction temperature	Tj	125	degrees Celcius
Storage temperature	Tstg	-55 to +125 degrees Celcius	degrees Celcius
Package code	-	CMPAK-4	-

2. Electrical Characteristics (Ta = 25 degrees Celcius)

Item	Symbol	HSB0104YP	Unit
Forward voltage	VF	0.58 IF = 0.1A	V
Reverse current	IR	50 VR = 20V	microA
Inter-pin capacitance	C	20Typ V = 0V, f = 1MHz	pF

top of this page