Hitachi, Ltd.(HYSE: HIT) today announced the release of two
series of 4-Mbit low-power SRAMs-the speed-oriented HM62W16256B series
(3.3 V models) and the HM62V16256B series (3.0 V models) designed for lower
power consumption-that employ an ultra-small TFBGA (thin fine pitch ball
grid array) package, a type of CSP (chip scale package). Sample shipments
will begin in November 1998 in Japan.
The use of a 48-pin TFBGA, approximately half the size of a 44-pin TSOP-II
package, together with a x16-bit configuration and reduced current dissipation,
offer a solution to the requirements of small size, high speed, and low
power consumption in portable phones and portable information devices.
With no need for refreshing, low-power SRAM can retain its data at a low
voltage. This feature has led to its widespread use in small systems such
as portable devices and various kinds of terminals, and in memory cards,
computer-related equipment, OA equipment, and so on.
Also, with the continuing trend toward lower operating voltages in microprocessors
and peripheral LSIs, and the remarkable popularity of battery-driven products
such as handheld terminals, notebook PCs and OA devices, and electronic
notepads, there are growing calls for low-voltage operation of low-power
SRAMs, in addition to the ongoing demand for higher speed.
In response to this demand, Hitachi is already mass-producing the HM62W8512A
series of 4-Mbit low-power SRAMs, featuring 3.3 V operation and a x8-bit
configuration, which meet the need for large capacity, high speed, and
low power consumption.
Following on from this series, Hitachi has now developed two series
of low-power 4-Mbit SRAMs employing a new 48-pin TFBGA package and a x16-bit
configuration, specifically to meet the demand for small size, light weight,
high speed, and low power consumption in portable phones and other portable
devices.
With a 256 k x 16-bit configuration and the use of 6 MOS (full CMOS)
memory cells, these two new series feature a data retention current of
only 1 microA (max.), less than one tenth that of Hitachi products using
conventional TFT load type memory cells. In addition, the use of a 0.35
micrometers CMOS process and a circuit design technology, has resulted
in a low operating voltage of 2.7 V to 3.6 V (HM62V16256B series) and high
speed, with a fastest access time of 55 ns (HM62W16256B series, 3.3 V +/-
0.3V power supply voltage).
The newly developed TFBGA package is a type of CSP with a mounting area
approximately half that of a 44-pin TSOP-II package. This TFBGA package
has been developed to the commercial production stage by adding major improvements
in terms of mass-producibility and reliability to the BGA(R)*
technology introduced by Tessera, Inc.
A 44-pin TSOP-II package will also be available concurrently with a
48-pin TFBGA package. There are two access times for the HM62W16256B series
(55 or 70 ns) and for the HM62V16256B series (70 or 85 ns), and two types-L
and SL-are available with various differences in current dissipation. Each
series includes eight models to meet a wide variety of needs.
Future plans include the development of products with even lower operating voltages in the range 2.3 V to 2.7 V. In addition, work is in progress on a TSOP
package product with one /CS function pin, offering pin-compatibility with
high-speed SRAM, to meet the demand for memory systems with even higher
performance.
Note*: BGA is a registered trademark of Tessera, Inc.
Typical Applications
Portable phones
Portable information terminals
Electronic notepads
POS and other handheld terminals
Memory cards
Features
1. Ultra-Small Package
An ultra-small TFBGA package, a type of CSP, has been developed, enabling
an approximately half the size of a 44-pin TSOP-II package in mounting
area.
2. 256-kword x 16-Bit Configuration
These are Hitachi's first commercial 4-Mbit low-power SRAMs with a
256-kword x 16-bit configuration.
3. Low Current Dissipation
The data retention current has been reduced to only 1 microA (max.),
less than one tenth that of previous Hitachi products, allowing long-term
data retention on battery backup.
4. High Speed
The 3.3 V HM62W16256B Series features a 55 ns access time, enabling
low-voltage operation to be achieved without sacrificing system performance.
5. Battery Backup
Two chip enable pins (CS1 and CS2) provide easy data retention mode
control.
Prices in Japan
Product Code |
Power Supply Voltage |
Package |
Access Time |
Current Dissipation |
Sample Price (Yen) |
HM62W16256BLTT-5 |
3.3 V +/- 0.3 V |
TSOP |
55ns |
L version |
1,750 |
HM62W16256BLTT-7 |
70ns |
1,700 |
HM62W16256BLTT-5SL |
55ns |
SL version |
1,750 |
HM62W16256BLTT-7SL |
70ns |
1,700 |
HM62W16256BLBT-5 |
TFBGA |
55ns |
L version |
1,750 |
HM62W16256BLBT-7 |
70ns |
1,700 |
HM62W16256BLBT-5SL |
55ns |
SL version |
1,750 |
HM62W16256BLBT-7SL |
70ns |
1,700 |
HM62V16256BLTT-7 |
2.7 V to 3.6 V |
TSOP |
70ns |
L version |
1,800 |
HM62V16256BLTT-8 |
85ns |
1,750 |
HM62V16256BLTT-7SL |
70ns |
SL version |
1,800 |
HM62V16256BLTT-8SL |
85ns |
1,750 |
HM62V16256BLBT-7 |
TFBGA |
70ns |
L version |
1,800 |
HM62V16256BLBT-8 |
85ns |
1,750 |
HM62V16256BLBT-7SL |
70ns |
SL version |
1,800 |
HM62V16256BLBT-8SL |
85ns |
1,750 |
Specifications
Item |
HM62V16256B |
HM62W16256B |
Memory configuration |
256 k x 16 |
Power supply voltage (Vcc) |
2.7 V to 3.6 V |
3.3 V +/- 0.3 V |
Access time from CS |
70/85ns (max.) |
55/70ns (max.) |
Access time from address |
70/85ns (max.) |
55/70ns (max.) |
Access time from OE |
35/45ns (max.) |
35/35ns (max.) |
Average operating current (minimum cycle) |
70/65mA (max.) |
80/70mA (max.) |
TTL standby current |
0.3 mA (max.) |
CMOS standby current |
L version |
0.5microA(typ.) 20 microA(max.) |
SL version |
0.5 microA(typ.) 2 microA(max.) |
Data retention voltage |
2 V (min.) |
Data retention current |
L version |
0.5 microA(typ.) 10 microA(max.) |
SL version |
0.5 microA(typ.) 1 microA(max.) |
Input/output level |
ViH |
2.0 V to VCC + 0.3 V |
2.0 V to VCC + 0.3 V |
ViL |
-0.3 V to 0.6 V |
-0.3 V to 0.8 V |
Packages |
48-pin TFBGA (0.75 mm ball pitch)
44-pin TSOP type II |
WRITTEN BY Secretary's Office
All Rights Reserved,
Copyright (C) 1998, Hitachi, Ltd.