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July 26, 1999

Hitachi Releases Power MOSFET Featuring Low On-Resistance,
High Performance, and Low Drive Loss, for Use in Energy-Saving Power Supplies for Notebook PCs, etc.

- Industry's Lowest On-Resistance for an SOP-8 Small Surface-Mount Package Product -

Hitachi, Ltd. (TSE: 6501) today announced the HAT2064R power MOSFET, featuring low 
on-resistance, high performance, and low drive loss, for use in DC/DC converter power 
supplies for notebook PCs, switching systems for data communication equipment, and similar 
applications.  Sample shipments will begin on July 26, 1999 in Japan.

The HAT2064R achieves a low on-resistance of 5.0milli ohm (typ.) at a breakdown voltage of 30 
V, approximately 45% lower than that of previous Hitachi models, and the industry's lowest 
on-resistance for a product using an SOP-8 small surface-mount package.  High performance 
and low drive loss are also offered, enabling energy-saving power supply systems to be 
implemented.

Recently  the necessity of significantly better efficiency in electronic devices has greatly 
increased for energy-saving.  Meanwhile, the higher speeds and larger memory capacity of 
products such as notebook PCs and switching systems for data communication equipment 
have resulted in higher current dissipation.  Consequently, energy-saving designs are also 
needed for the DC/DC converter power supplies for such equipment, with requirements of 
lower voltage (1.2 V to 2.5 V output) and low power dissipation in standby mode.

DC/DC converter power supplies for switching systems, terminals, and similar products, have 
previously employed Schottky barrier diodes, with the use of secondary-side power supply 
rectification, but with the lower voltages of recent years, use of a secondary-side synchronous 
rectification method has become more widespread, employing low-on-resistance power 
MOSFETs with a small current dissipation loss.  Power MOSFETs in DC/DC converter 
power supplies of notebook PCs are demanded lower on-resistance, higher performance, and 
lower drive loss, to implement energy-saving systems. 

The new HAT2064R is an N-channel power MOSFET employing an SOP-8 small surface-
mount package that enables 4.5 V drive at a breakdown voltage of 30 V.  Use of a 0.5 micro meter 
process provides twice the previous cell density, while optimized design of the cell structure 
has resulted in an on-resistance approximately 45% lower than that of previous Hitachi 
models.  In addition, switching speed and drive loss have both been improved by 
approximately 35% at the same on-resistance, enabling low steady-state on loss, switching 
loss, and standby drive loss to be achieved, and making it possible to implement a highly 
efficient power supply.  With a DC/DC converter power supply with a voltage output of 2 V, 
for example, efficiency of 90% or more can be achieved, enabling an energy-saving power 
supply to be realized.

Future plans for the N-channel type include a 3.4milli ohm (typ) ultra-low on-resistance (at a 
breakdown voltage of 30 V) products for an SOP-8,  a 2.5 V drive series, and product lineups 
in the up-to-20 V and 60 V breakdown voltage classes.  In addition, the development of a P-
channel type is planned.  Package plans include a wider range of variations, including a 
TSSOP-8 thin type, and also DPAK and LDPAK packages (Hitachi package codes), to meet 
the needs of a wide variety of applications including automotive equipment.

< Typical Applications >
DC/DC converter power supplies for notebook PCs, etc.
Various kinds of DC/DC converter power supply (for synchronous rectification switching) for 
data communication equipment (switching systems, terminals) etc.
Various kinds of power management switches for electronic devices
Small motor drive for OA equipment, HDDs, etc.

< Price in Japan > (For Reference Only)
Product Code		Sample Price (Yen) 
HAT2064R		100                

( Supplementary Information )
< Features >
1. Ultra-low on-resistance: RDS(on) = 5.0milli ohm (typ.)
The HAT2064R achieves a low on-resistance of 5.0milli ohm (typ.) at a breakdown voltage of 30 
V, approximately 45% lower than that of previous Hitachi models.  The on-resistance is the 
industry's lowest for an SOP-8 package product, and in the future a 3.4milli ohm (typ.) ultra-low 
RDS(on) will be achievable.

2. High speed and low drive loss
By reducing gate drain charge Qgd (equivalent to feedback capacitance Crss), total gate 
charge Qg (equivalent to input capacitance Ciss) has been cut by approximately 35% 
compared with previous Hitachi models.  As a result, switching speed fall time tf, and the 
drive loss, have both been cut by approximately 35%.  By improving these two characteristics 
at the same time as the on-resistance, total loss has been reduced, enabling efficiency of 90% 
or more to be achieved with a low-voltage 2 V DC/DC converter power supply, for example, 
and so contributing to the implementation of an energy-saving system.

3. 4.5 V drive for power-saving systems
4.5 V drive capability offers the convenience of direct operation with a 5 V IC, for example, 
and helps to reduce power consumption in the user system by cutting the number of drive 
circuit parts.

< Specifications >
							10 V RDS 		4 V RDS 
				Maximum Ratings		(on) (milli ohm)	(on) (milli ohm)	Qg (typ)	tf (typ) 
Product		Package		VDSS	ID	Pch	typ	max		typ	max		(nC)		(ns)
Code				(V)	(A)	(W)                                                                              
HAT2064R	SOP-8		30	15	2.5	5.0   	6.3		7.0	10.0		40		20       
RDS(on): On-resistance


WRITTEN BY Secretary's Office
All Rights Reserved, Copyright (C) 1999, Hitachi, Ltd.