Hitachi, Ltd. (TSE: 6501) today announced the HB52R2569E2 (x72-bit configuration, with
register) of synchronous DRAM (SDRAM) module, containing seventy-two 256-Mbit
SDRAMs to provide an industry-first 2-Gbyte capacity, for use as main memory in
workstations and servers. Sample shipments will begin in October 1999 in Japan. This
product supports 100 MHz memory bus 168-pin DIMM (dual in-line memory modules)
designed for greater system capacity and smaller size.
With the increasing performance and storage capacity of workstations, servers, and similar
systems, there is a continuing trend toward larger-capacity memory devices for installation in
these systems. In line with this trend, greater capacity is also being demanded of DIMMs as a
means of achieving high-density mounting. Hitachi has previously released 1-Gbyte DIMMs
employing proprietary TCP stacked-mounting technology with two TCP layers. Now, to
meet the demand for even greater capacity, Hitachi has developed the HB52R2569E2 of
DIMM, offering the industry's first capacity of 2-Gbytes.
This product employs a 256-Mword x 72-bit configuration with ECC* support, suitable for
use in workstation and server applications, with seventy-two 256-Mbit SDRAMs (TCPs)
mounted on a printed circuit board. The component 256-Mbit SDRAMs use a 0.18 micro meter
process and leading-edge memory cell technology to achieve a combination of high speed.
This has made it possible to support a 100 MHz memory bus with 2-Gbyte DIMMs.
Hitachi's 2-Gbyte DIMM provides twice the density of the 1-Gbyte model within the same
size standard footprint.
Future plans include an extension of the product lineup to include models capable of
supporting a 133 MHz memory bus.
Note: ECC (Error Checking and Correction): A function that checks for, and corrects, data
errors in memory.
< Typical Applications >
Main memory in workstations, servers, etc. (Supporting 100 MHz memory bus)
< Prices in Japan > (For Reference Only)
Product Code Configuration Sample Price (Yen)
HB52R2569E2 256 Mwords x 72 bits 2,000,000
< Specifications >
Item HB52R2569E2-A6B HB52R2569E2-B6B
Memory configuration 256 Mwords x 72 bits
External power supply 3.3 V x 0.3 V
voltage
Memory bus frequency 100 MHz
CAS latency 2/3 3
Package 168-pin DIMM (dual in-line memory module)
133.37 mm x 53.34 mm x 4.80 mm
Buffering Buffer provided (PLL + register type)
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