The Semiconductor Group of Hitachi, Ltd. (TSE: 6501) today announced, as an
industry first, 512-Mbyte 184-pin DDR*1 SDRAM DIMMs*2 containing 256-Mbit
DDR synchronous DRAMs (DDR SDRAMs), for use as main memory in PCs,
workstations, servers, and similar products. Sample shipments of the unbuffered type
HB54A5129FN Series and the registered type HB54A5129F1 Series will begin in
January 2000 in Japan. These new DIMMs offer high-speed operation, with a data
transfer rate of 2.1-Gbytes per second.
256-Mbyte 184-pin DDR SDRAM DIMMs of the unbuffered type HB54A2569FM
Series and the registered type HB54A2569F1 Series are also developed and will start
the sample shipment from January 2000 in Japan.
The speed and performance of information device systems implementing network and
multimedia applications continue to increase, bringing a demand for greater
performance from the CPUs and memory devices used in such systems. In particular
demand are higher data transfer rates for the DRAMs used as main memory, and
Hitachi has already released fast DDR SDRAMs achieving data transfer rates of 266-
Mbps/pin and 200-Mbps/pin. Now, Hitachi has developed large-capacity 512-Mbyte
and 256-Mbyte modules incorporating DDR SDRAMs.
512-Mbyte models employ a 64-Mword x 72-bit configuration and 256-Mbyte
models employ a 32-Mword x 72-bit configuration. These products offer high-speed
operation, with data transfer rates of 2.1-Gbytes per second and 1.6-Gbytes per
second using 133MHz and 100MHz clocks. All power supply and input/output
voltages are 2.5 V, and an SSTL-2*3 I/O interface is used, enabling high-speed, low-
power-consumption operation. The modules are JEDEC standard 184-pin socket type
DIMMs.
These modules allow high-density mounting of DDR SDRAMs in various kinds of
information devices, making it possible to implement large-capacity, high-speed
information device systems.
Future plans include the development of a 1-Gbyte registered DIMMs, using Hitachi's
stacked TCP*4 mounting technology, together with further improvements in DDR
SDRAM speed and capacity.
Notes: 1. DDR: Double Data Rate. A data input/output method in which input/output
is synchronized with both rises and falls of an external clock.
2. DIMM: Dual In-line Memory Module
3. SSTL-2: Stub Series Terminated Logic for 2.5V
4. TCP: Tape Carrier Package
< Typical Applications >
Main memory or expansion memory for high-end workstations, servers, and PCs.
< Prices in Japan > (For Reference Only)
Product Name Sample Price (Yen)
512-Mbyte DIMMs HB54A5129FN 456,000 to 532,000
unbuffered type Series
512-Mbyte DIMMs HB54A5129F1 480,000 to 560,000
registered type Series
256-Mbyte DIMMs HB54A2569FM 240,000 to 280,000
unbuffered type Series
256-Mbyte DIMMs HB54A2569F1 264,000 to 308,000
registered type Series
< Specifications >
Item HB54A5129FN HB54A5129F1 HB54A2569FM HB54A2569F1
Product 64 Mwords x 64 Mwords x 32 Mwords x 32 Mwords x
configuration 72 bits 72 bits 72 bits 72 bits
Buffering Unbuffered Buffered Unbuffered Buffered
(PLL + register (PLL + register
type) type)
Power supply 2.5V +/- 0.2V
voltage
Operating Clock:100MHz/133MHz
frequency Data :200MHz/266MHz
Data transfer rate 1.6 Gbytes per second / 2.1 Gbytes per second
Burst length 2/4/8
Burst sequence Sequential/interleaved
Refreshing 8 kcycles/64 ms
Package 184-pin DIMM (Dual In-line Memory Module) |