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February 15, 2000 |
Hitachi Releases P-Channel Power MOS FETs with 50% Lower On-Resistance
than Previous Hitachi Models, for Power Control in Notebook PCs, etc. -Industry's lowest on-resistance of 5.5m ohm in small SOP-8 surface-mount package, for smaller, energy-saving systems- |
Hitachi, Ltd. (TSE: 6501) today announced the HAT1048R, HAT1051T, and HAT1054R P-channel power MOS FETs, featuring an on-resistance only half that of previous Hitachi models, for use as power management switches and overcharge/discharge protection circuit switches in notebook PCs and similar portable information products. Sample shipments of HAT1048R/HAT1054R and HAT1051T will begin on February 28 and March 31 2000 in Japan. These products allow a single chip to be used in systems that previously required two chips in parallel, making it possible to create smaller systems with fewer parts. Of the three new models, the HAT1048R achieves a low on-resistance of 5.5m ohm (typ.) at a -30 V breakdown voltage-the industry's highest performance for an SOP-8 (Hitachi package code) small surface-mount package-enabling systems to be made smaller while offering energy-saving features. Portable information products such as notebook PCs are equipped with power management or similar functions to provide longer operation on battery power, and P- channel power MOS FETs, which allow the drive circuitry to be simplified, are used as power control switches for this purpose. At the same time, the increasing power consumption of MPUs in recent years has brought a demand for a much lower on- resistance of these power MOS FETs. In the new HAT1048R, HAT1051T, and HAT1054R, a cell density 2.5 times that of previous products has been achieved through the use of a 0.5um process, and cell structure optimization has been implemented to achieve a lower on-resistance characteristic, resulting in a 50% lower on-resistance per unit chip area than previous Hitachi products. The HAT1048R has -30 V breakdown voltage, 4.5 V drive capability, and offers a low on-resistance of 5.5m ohm (typ., at 10 V drive), the industry's highest performance for an SOP-8. The HAT1051T has -30 V breakdown voltage, 4.5 V drive capability, employs a TSSOP-8 (Hitachi package code) thin type package, and offers an on-resistance of 12m ohm (typ., at 10 V drive). The HAT1054R, which comes in the form of two devices mounted in an SOP-8 package, has -20 V breakdown voltage, 2.5 V drive capability, and an on-resistance of 24m ohm (typ., at 4.5 V drive). Future plans include the development of various products offering different breakdown voltages and packages, suitable for a wide range of applications including small motor drive and automotive equipment. < Typical Applications > Power control (power management) switches for notebook PCs and similar portable information products Smart battery protection circuits < Prices in Japan > (For Reference) Part Number Package Type Sample Price (Yen) HAT1048R SOP-8 P-channel FET (1 device) 150 HAT1051T TSSOP-8 P-channel FET (1 device) 110 HAT1054R SOP-8 P-channel FET (2 devices) 110
< Specifications >
RDS(on): On-resistance
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WRITTEN BY Secretary's Office (C) Hitachi, Ltd. 2000. All rights reserved. |